- On-device cryogenic quenching enables robust amorphous tellurium for threshold switching
- 관리자 |
- 2026-02-11 10:09:50|
- 25
- 2026-02-11 10:09:50|
ㅇ [Title] On-device cryogenic quenching enables robust amorphous tellurium for threshold switching
ㅇ [Journal] Nature Communications
ㅇ [Author] Namwook Hur, Seunghwan Kim, Yu Bin Park, Changhwan Kim, Sohui Yoon, Youngseok Cho, Tae Hoon Lee*, Joonki Suh*
ㅇ [Abstrct]
Amorphous chalcogenide alloys have gained immense interest in their ovonic threshold switching. Yet, understanding device-level elemental behaviour, particularly for tellurium (Te),
has been hindered by its intrinsic low crystallization temperature and poor glass-forming ability. To overcome this challenge, the research team realized a robust amorphous Te (a-Te)
via on-device cryogenic quenching, which successfully suppresses crystallization from the supercooled liquid at low ambient temperature.
As a result, the ordered-to-disordered phase transition yields a threshold-voltage increase and a lower subthreshold current via enhanced deep-level trap formation. Moreover, by
preventing high operational currents, the a-Te exhibits self-regulated oscillation behaviour driven through deep-level defects. These findings support the conclusion that threshold
switching in Te originates from defect-mediated transitions before melting, rather than solely from thermal phase-change effects.
Our results provide insights into chalcogenide switching mechanisms and pave the way for stoichiometry-tuned selector devices, nano-oscillators, and selector-only memory
applications.
| 첨부파일 |
|
|---|